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| SSE55N03 Elektronische Bauelemente 55 A, 25 V, RDS(ON) 6 m N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of "-C" specifies halogen free DESCRIPTION The SSE55N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-220) is available for low-profile applications and suited for low voltage applications such as DC/DC converters. FEATURES Dynamic dv/dt Rating Simple Drive Requirement Repetitive Avalanche Rated Fast Switching PACKAGE DIMENSIONS REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 0.76 0.36 8.60 9.80 14.7 6.20 4.80 1.00 0.50 9.00 10.4 15.3 6.60 REF. c1 b1 L e L1 O A1 Millimeter Min. Max. 1.25 1.17 13.25 2.60 3.71 2.60 1.45 1.47 14.25 2.89 3.96 2.80 2.54 REF. ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current,VGS@ 10V Drain Current,VGS@ 10V Pulsed Drain Current Linear Derating Factor Single Pulse Avalanche Energy 2 Symbol VDS VGS ID @Ta=25 ID @Ta=100 IDM PD @Tc=25 EAS IAS Tj, Tstg Ratings 25 20 55 35 215 62.5 0.5 240 31 -55 ~ +150 Unit V V A A A W W/C mJ A C 1 Total Power Dissipation Single Pulse Avalanche Current Operating Junction and Storage Temperature Range THERMAL DATA Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rj-case Rj-amb Value 2.0 62 Unit C/W C/W 01-June-2005 Rev. A Page 1 of 4 SSE55N03 Elektronische Bauelemente 55 A, 25 V, RDS(ON) 6 m N-Channel Enhancement Mode Power Mos.FET ELECTRICAL CHARACTERISTICS (Tj = 25C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25) Drain-Source Leakage Current(Tj=150) Symbol BVDSS BVDSS Min. 25 1.0 - Typ. 0.037 30 4.5 7 16.8 6 4.9 15.1 4 45.2 7.6 2326 331 174 Max. 3.0 100 1 25 6 9 - Unit V Test Conditions VGS=0, ID=250uA /Tj V/C Reference to 25, ID=1mA V S nA uA uA m VDS=VGS, ID=250uA VDS=10V, ID=28A VGS= 20V VDS=25V, VGS=0 VDS=20V, VGS=0 VGS=10V, ID=30A VGS=4.5V, ID=30A ID=28A VDS=20V VGS=5V VDS=15V ID=28A VGS=10V RG=3.3 RD=0.53 VGS=0V VDS=25V f=1.0MHz VGS(th) gfs IGSS IDSS Static Drain-Source On-Resistance3 Total Gate Charge3 Gate-Source Charge Gate-Drain ("Miller") Change Turn-on Delay Time3 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss nC ns pF SOURCE-DRAIN DIODE Parameter Forward On Voltage2 Reverse Recovery Charge Symbol VSD IS Min. - Typ. - Max. 1.5 55 Unit V A Test Conditions IS=20A, VGS=0V, Tj=25C VD= VG=0V, VS=1.5V Notes: 1. Pulse width limited by safe operating area. 2. Staring Tj=25C, VDD=20V, L=0.1mH, RG=25, IAS=10A. 3. Pulse width300us, duty cycle2%. 01-June-2005 Rev. A Page 2 of 4 SSE55N03 Elektronische Bauelemente 55 A, 25 V, RDS(ON) 6 m N-Channel Enhancement Mode Power Mos.FET CHARACTERISTIC CURVE 01-June-2005 Rev. A Page 3 of 4 SSE55N03 Elektronische Bauelemente 55 A, 25 V, RDS(ON) 6 m N-Channel Enhancement Mode Power Mos.FET CHARACTERISTIC CURVE f=1.0MHz 01-June-2005 Rev. A Page 4 of 4 |
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